Abstract
Photoconductive semiconductor switches (PCSSs) are widely used in high power
ultra-wideband source applications and precise synchronization control due to their
high power low-jitter high-repetition-frequency. In this letter, a 14-mm gap
semi-insulating GaAs PCSS biased under 20 kV is triggered by a 1064-nm laser with a
repetition frequency of 30 Hz. Although the trigger condition is greater than the
threshold of the lock-on effect, the high gain mode is not observed. The results
indicate that the high gain mode of the PCSS is quenched by decreasing the remnant
voltage of pulsed energy storage capacitor.
© 2011 Chinese Optics Letters
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