Abstract

End-pumped by a 976 nm diode laser, a high-repetition-rate Er:Yb:YAl₃(BO₃)₄ microchip laser passively Q-switched by a Co²⁺:MgAl₂O₄ crystal is reported. At a quasi-continuous-wave pump power of 20 W, a 1553 nm passively Q-switched laser with the repetition rate of 544 kHz, pulse duration of 8.3 ns, and pulse energy of 3.9 µJ was obtained. To the best of our knowledge, the 544 kHz is the highest reported value for the 1.5 µm passively Q-switched pulse laser. In the continuous-wave pumping experiment, the maximum repetition rate of 144 kHz with the pulse duration of 8.0 ns and pulse energy of 1.7 µJ was obtained at the incident pump power of 6.3 W.

© 2021 Chinese Laser Press

Eye-safe 1.55 µm Er:Yb:YAl₃(BO₃)₄ microchip laser

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OSA Continuum 2(1) 142-150 (2019)

Passively Q-switched microchip Er, Yb:YAl₃(BO₃)₄diode-pumped laser

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Efficient continuous-wave and passively Q-switched pulse laser operations in a diffusion-bonded sapphire/Er:Yb:YAl₃(BO₃)₄/sapphire composite crystal around 1.55 μm

Yujin Chen, Yanfu Lin, Jianhua Huang, Xinghong Gong, Zundu Luo, and Yidong Huang
Opt. Express 26(1) 419-427 (2018)

Eye-safe 1.55  μm passively Q-switched Er,Yb:GdAl₃(BO₃)₄ diode-pumped laser

K. N. Gorbachenya, V. E. Kisel, A. S. Yasukevich, V. V. Maltsev, N. I. Leonyuk, and N. V. Kuleshov
Opt. Lett. 41(5) 918-921 (2016)