Abstract
Polycrystalline silicon (poly-Si) has attracted significant interest in the area of silicon photonics because of its potential for combining good optical transmission, electronic functionality and low fabrication cost, which makes it an attractive material for commercial applications [1]. In addition, it was shown recently that by laser processing of amorphous Si (a-Si) it is possible to obtain very large grain poly-Si [2] resulting in a material with superior optical and electronic performance.
© 2017 IEEE
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