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Optica Publishing Group
  • Applied Spectroscopy
  • Vol. 34,
  • Issue 2,
  • pp. 171-173
  • (1980)

Low Temperature Evaluation of Carbon and Oxygen Contaminants in Silicon

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Abstract

Low temperature Fourier transform infrared measurements at 20 K on some wafers containing substitutional atomic carbon and oxygen are presented. Spectral subtraction techniques at 20 K indicate an increase of approximately 5 times in sensitivity compared to the room temperature evaluation of the carbon and oxygen concentrations.

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