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InGaAs quantum-well saturable absorbers for a diode-pumped passively Q -switched Nd:YAG laser at 1123 nm

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Abstract

A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123  nm. With an incident pump power of 16 W, an average output power of 3 .1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained.

© 2006 Optical Society of America

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