Abstract

A theoretical analysis of phase enhancement by resonant Fabry–Perot picture elements in III–V semiconductor spatial light modulators (SLM’s) is presented. For 90% reflecting electrodes, a phase modulation of 0.7π rad is found in transmission when the electro-optic input phase is 0.06π rad. Implementation of this resonant phase-dominant SLM in a 1.5-μm-thick AlGaAs/GaAs multiple quantum well (MQW) structure is proposed. Field effects and carrier-induced electro-optic effects are suggested for the MQW’s.

© 1992 Optical Society of America

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