Abstract

The intrinsic stress properties of GeO₂- and F-doped optical fiber preforms have been investigated in detail. The materials were prepared by low-pressure plasma-induced chemical vapor deposition (PCVD), and the dopant concentrations cover the range normally used in optical fiber manufacture (+1% > Δ > −1%). Homogeneously doped preform regions exhibit a constant stress level. This level is exclusively dependent on dopant concentrations. In GeO₂-doped silica the stress increases linearly with the dopant concentration. For F-doped silica, however, this dependency is strongly nonlinear. A negative stress difference between undoped PCVD material and the substrate tube material can be explained by the reduced thermal expansion coefficient of PCVD-SiO₂ caused by chlorine incorporated during the deposition step. The experiments agree excellently with theoretical predictions based on thermal expansion data.

© 1986 Optical Society of America

Stress in optical waveguides. 2: Fibers

P. K. Bachmann, W. Hermann, H. Wehr, and D. U. Wiechert
Appl. Opt. 26(7) 1175-1182 (1987)

Measurement of stresses in optical fiber and preform

P. L. Chu and T. Whitbread
Appl. Opt. 21(23) 4241-4245 (1982)

Stress in optical waveguides. 3: Stress induced index change

W. Hermann, M. Hutjens, and D. U. Wiechert
Appl. Opt. 28(11) 1980-1983 (1989)

Stress-induced index profile distortion in optical waveguides

George W. Scherer
Appl. Opt. 19(12) 2000-2006 (1980)

Raman microprobe analysis of preforms and optical fibers

W. Carvalho, P. Dumas, M. Delhaye, J. Corset, Y. Levy, and C. Imbert
Appl. Opt. 23(23) 4197-4201 (1984)