Evolution of Optical Thin Films by Sputtering

William J. Coleman

doi:10.1364/AO.13.000946

Applied Optics
Vol. 13,
Issue 4,
pp. 946-951
(1974)
•https://doi.org/10.1364/AO.13.000946

Evolution of Optical Thin Films by Sputtering

William J. Coleman

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William J. Coleman, "Evolution of Optical Thin Films by Sputtering," Appl. Opt. 13, 946-951 (1974)

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Abstract

Sputter deposition was used to obtain optical thin films of TiO₂, ZrO₂, and CeO₂ having (1) refractive indices greater than those obtained by vacuum vapor deposition techniques, (2) improved abrasion resistance, and (3) better substrate adherence. SiO₂ and SiO films with indices of 1.4 and 1.9, respectively, were obtained, but reproducible intermediate indices were not. Films with intermediate refractive indices showed absorption at the short wavelength end of the visible spectrum. Deposition of MgF₂ by partial pressure of Freon 14 was moderately successful. The relationship between thickness and time was sufficiently accurate to monitor film thickness. Thickness evaluation with TiO₂, CeO₂, and SiO₂ indicated that reproducibility was within ±2% of desired optical thickness.

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	MgF₂	SiO, SiO target	SiO₂, SiO target	SiO Target	CeO₂	TiO₂	ZrO₂, Zr target
Pressure

Ar(μm)	5	4.5	4	4	5	4	5
O₂(μm)	—	—	1	1	3	4	1.5
H₂(%)	—	8	—	—	—	—	—
CF₄	1	—	—	—	—	—	—
Total (μm)	6	5	5	5	8	9	6.5
Power, W

Forward	800	800	800	600	500	500	500
Bias, v	350	200	200	50	50	125	100
Deposition time, min	20	16.5	16.5	13.5	10	29.5	30
Optical thickness, nm	1120	650	—	—	~525	~720	1060
Power range, W	200	800	800
	min	max	max
Sputter etch

Power total, W	400	300	300	300	500	400	400
Etch power	200	150 (700 V)	150	150	250	200	200
Time, min	4	3	3	3	4	4	4
Power range, W	600	800	500
	max	max	max

Wavelength	Refractive index

	SiO₂	SiO	CeO₂	TiO₂	ZrO₂
450 nm	—	—	—	2.65	—
560^a nm	—	—	2.5^a	—	—
580^a nm	—	—	2.49^a	2.55	—
670 nm	—	1.9	—	2.53^a	—
700 nm	—	—	—	2.5	—
760 nm	—	—	2.45^a	2.60	—
1.06 μm	—	—	2.45	—	2.2
1.110 μm	1.48^a	1.87^a	—	—	—

	MgF₂	SiO, SiO target	SiO₂, SiO target	SiO Target	CeO₂	TiO₂	ZrO₂, Zr target
Pressure

Ar(μm)	5	4.5	4	4	5	4	5
O₂(μm)	—	—	1	1	3	4	1.5
H₂(%)	—	8	—	—	—	—	—
CF₄	1	—	—	—	—	—	—
Total (μm)	6	5	5	5	8	9	6.5
Power, W

Forward	800	800	800	600	500	500	500
Bias, v	350	200	200	50	50	125	100
Deposition time, min	20	16.5	16.5	13.5	10	29.5	30
Optical thickness, nm	1120	650	—	—	~525	~720	1060
Power range, W	200	800	800
	min	max	max
Sputter etch

Power total, W	400	300	300	300	500	400	400
Etch power	200	150 (700 V)	150	150	250	200	200
Time, min	4	3	3	3	4	4	4
Power range, W	600	800	500
	max	max	max

Wavelength	Refractive index

	SiO₂	SiO	CeO₂	TiO₂	ZrO₂
450 nm	—	—	—	2.65	—
560^a nm	—	—	2.5^a	—	—
580^a nm	—	—	2.49^a	2.55	—
670 nm	—	1.9	—	2.53^a	—
700 nm	—	—	—	2.5	—
760 nm	—	—	2.45^a	2.60	—
1.06 μm	—	—	2.45	—	2.2
1.110 μm	1.48^a	1.87^a	—	—	—

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Applied Optics