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Time-Resolved Fourier Measurement for Semiconductors by Near-Infrared Dual-Comb Spectroscopy

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Abstract

Complex near-infrared refractive-index spectra of Si and GaAs wafers were characterized by dual-comb spectroscopy (DCS). Transient interferogram was observed for an InGaAs-based saturable absorber in time-resolved DCS, demonstrating potential as a full-characterization tool.

© 2016 Optical Society of America

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