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Electron and Hole Dynamics in Silicon-Germanium Alloy Measured by Attosecond XUV Transient Absorption

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Abstract

Electron-hole dynamics is measured by attosecond transient absorption in silicon-germanium alloy. The germanium atoms act as reporter atoms by time-dependent probing the M4,5-edge, revealing electron and hole dynamics, as well as a new midgap feature.

© 2016 Optical Society of America

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More Like This
Ultrafast Transient Absorption at the Germanium M4,5-edge to Measure Electron and Hole Dynamics

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