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Carrier-phonon Dynamics at Buried Interface of GaP/Si(001)

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Abstract

Phonon-plasma coupling dynamics of lattice-matched GaP/Si(001) interface is investigated by photo-doping with femtosecond NUV pulses. Anti-phase domains arising from the interfaces are found to induce steep band bending within the nanometer-thick GaP film.

© 2014 Optical Society of America

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