Carrier Dependent Stability of a Semiconductor Lattice Measured with Femtosecond X-ray Diffraction

K.J. Gaffney; P.B. Hillyard; A.M. Lindenberg; S. Engemann; A. Deb; D.A. Meyer; J.B. Hastings

doi:10.1364/UP.2006.WB2

15th International Conference on Ultrafast Phenomena
OSA Technical Digest Series (CD) (Optica Publishing Group, 2006),
paper WB2
•https://doi.org/10.1364/UP.2006.WB2

Carrier Dependent Stability of a Semiconductor Lattice Measured with Femtosecond X-ray Diffraction

K.J. Gaffney, P.B. Hillyard, A.M. Lindenberg, S. Engemann, A. Deb, D.A. Meyer, and J.B. Hastings

International Conference on Ultrafast Phenomena 2006

Pacific Grove, California United States
31 July–4 August 2006
ISBN: 1-55752-810-1

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Ultrafast X-Ray Diffraction (WB)

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K. J. Gaffney, P. B. Hillyard, A. M. Lindenberg, S. Engemann, A. Deb, D. A. Meyer, and J. B. Hastings, "Carrier Dependent Stability of a Semiconductor Lattice Measured with Femtosecond X-ray Diffraction," in 15th International Conference on Ultrafast Phenomena, OSA Technical Digest Series (CD) (Optica Publishing Group, 2006), paper WB2.

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Abstract

The melting dynamics of laser excited InSb have been studied with femtosecond x-ray diffraction. These measurements have allowed us to characterize the atomic motion occurring during the initial stages of a photo-induced phase transition.

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