Abstract

THz radiation from several kinds of semiconductors had been reported from many groups.^1~2) The emitters like photoconductive or Bow-tie antennas had been fabricated on S. I. GaAs and LT GaAs³⁾. The receiver had been reported from many methods such as dipole detection, E-O sampling, Bolometer etc. Dipole detection has the advantage of large responsively. Comparison of photoconductive antennas between LT GaAs and S. I. GaAs had been characterized from M. Tani et al³⁾. Arsenic-ion-implant GaAs (GaAs: As⁺) had been reported with ultrafst carrier lifetime that is similar as LT GaAs⁴⁾. In this paper, we will introduce the temporal difference between THz radiation from GaAs: As⁺ and S.I. GaAs fabricated dipole antennas with variant bias field and optical excitation power.

© 2002 Optical Society of America