Effect of lattice defects on LO phonon-plasmon coupled modes in n-GaAs

Muneaki Hase; Kunie Ishioka; Masahiro Kitajima; Kiminori Ushida

doi:10.1364/UP.2000.MF53

Ultrafast Phenomena
OSA Trends in Optics and Photonics (Optica Publishing Group, 2000),
paper MF53
•https://doi.org/10.1364/UP.2000.MF53

Effect of lattice defects on LO phonon-plasmon coupled modes in n-GaAs

Muneaki Hase, Kunie Ishioka, Masahiro Kitajima, and Kiminori Ushida

International Conference on Ultrafast Phenomena 2000

Charleston, South Carolina United States
ISBN: 1-55752-640-0

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Poster Session 1 (MF)

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M. Hase, K. Ishioka, M. Kitajima, and K. Ushida, "Effect of lattice defects on LO phonon-plasmon coupled modes in n-GaAs," in Ultrafast Phenomena, T. Li, ed., Vol. 43 of OSA Trends in Optics and Photonics (Optica Publishing Group, 2000), paper MF53.

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Abstract

We have studied effect of point defects on generation and relaxation of coherent LO phonon-plasmon coupled modes in He-ion irradiated n-GaAs. The results suggest that defect- induced carrier trapping dominate annihilation of the coherent coupled modes.

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