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Femtosecond intersubband dynamics of holes in p-type modulation-doped Si1−xGex/Si multiple quantum wells

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Abstract

Ultrafast hole dynamics in Si0.5Ge0.5/Si multiple quantum wells is studied with resonant excitation of the HH1➔HH2 heavy-hole intersubband transition. Pump-probe experiments with 150-fs mid-infrared pulses demonstrate intersubband scattering and thermalization on a subpicosecond timescale.

© 2000 Optical Society of America

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