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Conferences > UEO > 2003 > WC > WC3

Ultrafast inter-subband hole relaxation in an InGaN multiple-quantum-well laser-diodeantum-well (MQW) laser diode

K. Gan, J. Bowers, S. DenBaars, and C. Sun

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Abstract

The femtosecond carrier dynamics in InGaN MQW laser diodes were investigated using a time-resolved bias-lead monitoring technique. Ultrafast inter-subband hole relaxation processes were found to dominated the observed carrier dynamics.

© 2003 Optical Society of America

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