Subpicosecond nonlinear absorption recovery dynamics of low-temperature-grown In0.53Ga0.47As/In0.52Al0.48As multiple quantum well p-i-n structures

Paul W. Juodawlkis; Zhiping Zhou; Carl M. Verber; David T. McInturff; Marian C. Hargis; Stephen E. Ralph

doi:10.1364/UEO.1997.UG7

Ultrafast Electronics and Optoelectronics
OSA Trends in Optics and Photonics Series (Optica Publishing Group, 1997),
paper UG7
•https://doi.org/10.1364/UEO.1997.UG7

Subpicosecond nonlinear absorption recovery dynamics of low-temperature-grown In_0.53Ga_0.47As/In_0.52Al_0.48As multiple quantum well p-i-n structures

Paul W. Juodawlkis, Zhiping Zhou, Carl M. Verber, David T. McInturff, Marian C. Hargis, and Stephen E. Ralph

Ultrafast Electronics and Optoelectronics 1997

Incline Village, Nevada United States
ISBN: 1-55752-486-6

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P. W. Juodawlkis, Z. Zhou, C. M. Verber, D. T. McInturff, M. C. Hargis, and S. E. Ralph, "Subpicosecond nonlinear absorption recovery dynamics of low-temperature-grown In0.53Ga0.47As/In0.52Al0.48As multiple quantum well p-i-n structures," in Ultrafast Electronics and Optoelectronics, M. Nuss and J. Bowers, eds., Vol. 13 of OSA Trends in Optics and Photonics Series (Optica Publishing Group, 1997), paper UG7.

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Abstract

Electroabsorption modulation is demonstrated in low-temperature-grown InGaAs/InAlAs multiple quantum wells exhibiting 600 fs nonlinear absorption recovery associated with anneal-stable Be-As defects. We show that the absorption recovery time, which depends on the active-defect density, can be controlled by adjusting the Be-doping concentration.

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