Abstract

We present a new family of more efficient terahertz (THz) radiation emitters and detectors enhanced by electric field singularities near sharp electrode features. The structures are fabricated on low temperature GaAs and with small dipole gaps (<10μm). The THz emission is maximal when fringing fields are enhanced by laterally offset sharp electrodes. We also find that the asymmetric THz emission near the anode gradually disappears as the dipole gap shrinks. The THz polarization properties of these new emitters will also be discussed.

© 1997 Optical Society of America