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Fast Vertical Silicon Photodetectors with Buried CoSi2 Contact

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Abstract

Si-based integrated optoelectronics for high-speed applications demands ultrafast photodetectors with a good quantum collection efficiency (QCE). Several approaches towards such diodes have been pursued in the past: (i) Ultrashort electric transients of 5 ps duration (FWHM) can be derived from planar metal-semiconductor-metal (MSM) photodiodes with interdigitated metal finger structures [1]. The speed is determined by the sweep-out time of the photogenerated carriers. However, for very fast response, a metal finger seperation of typically 300 nm is required and electron-beam lithography has to be employed in the fabrication process [1]. (ii) Electric pulses with a sub-ps FWHM are derived from conductance-lifetime-limited photodetectors such as photoconductive switches [2]. Unfortunately, those detectors suffer from a very low QCE on the order of 10−5.

© 1995 Optical Society of America

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