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Impact ionization in wide-band-gap materials under high-field

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Abstract

Impact ionization coefficient under extremely high electric field is a very important parameter in electron transport. Because of the electric breakdown under high electric field, the impact ionization parameter is measured at DC fields up to 15 MV/cm in SiO2 [1]. In this paper, we report that by employing femtosecond laser pulses, we were able to measure the impact ionization parameters of SiO2 and MgF2 in electric fields as high as 280 MV/cm.

© 1995 Optical Society of America

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