Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Monolithic integration of low-temperature-grown GaAs and high-mobility 2DEG for ultrafast photonic circuits

Not Accessible

Your library or personal account may give you access

Abstract

GaAs grown at low substrate temperatures by molecular beam epitaxy (LT GaAs) and subsequently annealed exhibits properties attractive for photonic circuits incorporating ultrafast photodetectors and active devices such as FET’s.1 It is highly insulating, making it attractive as a buffer layer to suppress backgating in FET’s,2 and it exhibits sub-picosecond carrier lifetime3 making it highly suitable for ultrafast photoconductive switches.

© 1995 Optical Society of America

PDF Article
More Like This
Photoconductive Sampling Circuits Using Low-Temperature GaAs Interdigitated Switches

J. Allam, K. Ogawa, J. White, N.de B. Baynes, J. R. A. Cleaver, I. Ohbu, T. Tanoue, and T. Mishima
G4 Ultrafast Electronics and Optoelectronics (UEO) 1993

Transient Absorption of Low-Temperature-MBE-Grown GaAs

T.B. Norris, W. Sha, WJ. Schaff, and X.J. Song
FC4 Picosecond Electronics and Optoelectronics (UEO) 1991

ULTRAFAST LOW-TEMPERATURE-GROWN-GaAs PHOTOMIXERS*

K. A. McIntosh, E. R. Brown, K. B. Nichols, O. B. McMahon, K.M. Molvar, W.F. DiNatale, and T.M. Lyszczarz
UTUA6 Ultrafast Electronics and Optoelectronics (UEO) 1995

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved