Abstract
GaAs grown at low substrate temperatures by molecular beam epitaxy (LT GaAs) and subsequently annealed exhibits properties attractive for photonic circuits incorporating ultrafast photodetectors and active devices such as FET’s.1 It is highly insulating, making it attractive as a buffer layer to suppress backgating in FET’s,2 and it exhibits sub-picosecond carrier lifetime3 making it highly suitable for ultrafast photoconductive switches.
© 1995 Optical Society of America
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