Abstract

Perhaps die most frequently used approach to measuring electron-hole recombination rates in semiconductors is to examine photoluminescence decay. If me luminescence is at a wavelength of 1.5 μm or shorter, decay can be measured with picosecond time resolution using a streak camera, photodiode, or photon counting apparatus. Time-resolving photoluminescence in the mid-infrared is problematic because of the lack of fast photodiodes or suitable photocathodes for these wavelengths. Excitation correlation (EC) is an alternative to time-resolved luminescence that requires only slow photodetectors.^1-3 Previously, EC has been used to measure carrier decay for materials emitting in die visible and near infrared. Here we extend die technique to die mid-infrared. We describe numerical calculations to derive Shockley-Read, radiative, and Auger coefficients.

© 1995 Optical Society of America