Abstract

Indium Phosphide channel JFET's with InGaAs lattice matched gate have been fabricated using liquid, non-hydride column V precursors. The incorporation of low bandgap InGaAs gate layer not only suppresses hole injection under forward bias but also makes fabrication of HJFETs very reproducible and easy. Self-aligned devices made by selective etching of the gate resulted in devices with current gain cut-off frequency as high as 22 GHz with transconductance over 200 mS/mm for gate length of about 0.65 µm.

© 1993 Optical Society of America