Picosecond Gain Dynamics in Vertical Cavity Surface Emitting Laser: Transient Carrier Heating and Gain Enhancement

Gaiy Wang; Radhakrishnan Nagarajan; Dan Tauber; John E. Bowers

doi:10.1364/UEO.1993.A6

Ultrafast Electronics and Optoelectronics
OSA Proceedings Series (Optica Publishing Group, 1993),
paper A6
•https://doi.org/10.1364/UEO.1993.A6

Picosecond Gain Dynamics in Vertical Cavity Surface Emitting Laser: Transient Carrier Heating and Gain Enhancement

Gaiy Wang, Radhakrishnan Nagarajan, Dan Tauber, and John E. Bowers

Ultrafast Electronics and Optoelectronics 1993

San Francisco, California United States
ISBN: 1-55752-275-8

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G. Wang, R. Nagarajan, D. Tauber, and J. E. Bowers, "Picosecond Gain Dynamics in Vertical Cavity Surface Emitting Laser: Transient Carrier Heating and Gain Enhancement," in Ultrafast Electronics and Optoelectronics, J. Shah and U. Mishra, eds., Vol. 14 of OSA Proceedings Series (Optica Publishing Group, 1993), paper A6.

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Abstract

Enhancement of resonance frequency up to 87 GHz has been observed in a vertical cavity surface emitting laser. We derive an analytical expression for the intrinsic gain suppression factor based on carrier heating. The theory shows good agreement with the published experimental value of ε = 1.5×l0¹⁷cm³ for in-plane lasers. For the first time, we predict and experimentally observe a negative gain suppression factor for particular laser designs. A negative gain suppression factor can lead to the elimination of damping in semiconductor lasers. Using vertical cavity surface emitting lasers, we observe a negative gain suppression factor of - 2.2×10^-17cm³.

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