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Conferences > UEO > 1993 > A > A5

Femtosecond Periodic Gain Vertical-Cavity Semiconductor Lasers

Wenbin Jiang, Mitsuaki Shimizu, Richard P. Mirin, Thomas E. Reynolds, and John E. Bowers

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Abstract

A periodic gain structure was used as the gain medium in an optically pumped mode-locked vertical-cavity surface-emitting semiconductor laser to decrease the effective carrier lifetime. A laser pulsewidth of under 190 fs was directly generated from die laser cavity.

© 1993 Optical Society of America

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