Photoconductivity in Si/SiO2 Single Quantum Wells and Quantum Dot Layers

Bert Stegemann; Thomas Lussky; Andreas Schoepke; Manfred Schmidt

doi:10.1364/SOLAR.2008.SWC3

Solar Energy: New Materials and Nanostructured Devices for High Efficiency
(Optica Publishing Group, 2008),
paper SWC3
•https://doi.org/10.1364/SOLAR.2008.SWC3

Photoconductivity in Si/SiO₂ Single Quantum Wells and Quantum Dot Layers

Bert Stegemann, Thomas Lussky, Andreas Schoepke, and Manfred Schmidt

Solar Energy: New Materials and Nanostructured Devices for High Efficiency 2008

Stanford, California United States
24–25 June 2008
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Poster Session II (SWC)

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B. Stegemann, T. Lussky, A. Schoepke, and M. Schmidt, "Photoconductivity in Si/SiO2 Single Quantum Wells and Quantum Dot Layers," in Solar Energy: New Materials and Nanostructured Devices for High Efficiency, (Optica Publishing Group, 2008), paper SWC3.

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Abstract

Si/SiO₂ single quantum wells and quantum dot layers were prepared under ultrahigh vacuum conditions and studied with respect to possible photovoltaic applications. The detection of a photocurrent in such structures is demonstrated. Its spectral dependence correlates with the respective structural properties. Internal quantum efficiencies of photoconductivity and, thus, carrier mobilities and lifetimes, are strongly affected by Si/SiO₂ interface states and were enhanced upon hydrogen treatment due to passivation of interface gap states.

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