We study optically pumped lasing in micro-cavities with high Sn content active GeSn layers. We show that the crystalline quality of the GeSn active layers are greatly improved when grown on GeSn step-graded buffers instead of directly on Ge strained relaxed buffers. High Sn content, up to 16% of Sn, was reached leading to lasing operation temperature up to 180K in micro-disks, paving the way to the use of GeSn in monolithically integrated light source devices.

© 2018 The Author(s)

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