Abstract

The surface chemical state and local electronic structure of AlxGa1-xN (x=0~0.45) epi-layers have been systematically investigated by X-ray photoelectron spectroscopy (XPS) and extended X-ray absorption fine structure (EXAFS) spectroscopy. It was identified that the Ga-O components were converted to Al-O components when the AlxGa1-xN sample was exposed to air. The EXAFS analysis also reveals that the Ga-N and Ga-Al bond lengths are independent of the Al composition, whereas the Ga-Ga bond length is a function of Al composition.

© 2014 Optical Society of America

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