The surface chemical state and local electronic structure of AlxGa1-xN (x=0~0.45) epi-layers have been systematically investigated by X-ray photoelectron spectroscopy (XPS) and extended X-ray absorption fine structure (EXAFS) spectroscopy. It was identified that the Ga-O components were converted to Al-O components when the AlxGa1-xN sample was exposed to air. The EXAFS analysis also reveals that the Ga-N and Ga-Al bond lengths are independent of the Al composition, whereas the Ga-Ga bond length is a function of Al composition.

© 2014 Optical Society of America

PDF Article | Presentation Video


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription

Supplementary Material (1)

Presentation video access is available to:

  1. OSA Publishing subscribers
  2. Technical meeting attendees
  3. OSA members who wish to use one of their free downloads. Please download the article first. After downloading, please refresh this page.

Contact your librarian or system administrator
Log in to access OSA Member Subscription or free downloads