Abstract

Deep ultraviolet light-emitting diodes (DUV-LEDs) and laser diodes (LDs) with emission wavelengths in the range of 220-350 nm are expected for a wide variety of applications, such as sterilization, water purification, medicine and biochemistry, light sources for high-density optical recording, white light illumination, fluorescence analytical systems and related information sensing fields, air purification equipment, and zero-emission automobiles. Because of their wide direct-transition energy range in the UV, ranging between 6.2 eV (AlN) and 3.4 eV (GaN), AlGaN and quaternary InAlGaN are attracting considerable attention as candidate materials for the realization of DUV-LEDs and LDs.

© 2014 Optical Society of America

PDF Article