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Conferences > SOLED > 2014 > DTu3D > DTu3D.5

Improved light extraction efficiency of InGaN/GaN light-emitting diodes using dielectric coated nanopillars

Ahmed Fadil, Yiyu Ou, Xiaolong Zhu, and Haiyan Ou

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Abstract

Nanopillars have been fabricated on InGaN/GaN light-emitting diodes using nanosphere lithography. With HCl treatment and SiN passivation a photoluminescence improvement by a factor of 7.8 was obtained compared to the untreated nanopillar structure.

© 2014 Optical Society of America

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