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Advancing InGaN LEDs: Materials and Devices

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Abstract

In this presentation, Enraytek’s latest progress on improving InGaN LEDs efficiency at high driving current density conditions will be discussed. In the materials aspects, we will highlight our epitaxial strategy, which replies on V-shaped defects for increasing quantum efficiency. These V-shaped defects are intentionally created underneath the quantum wells region and cause quantum wells disruption in lateral directions. The experimental and calculation results show that these structures relax strain, scatter light, and enhance carrier injections in quantum wells. In the device aspects, we investigate highly reflective electrodes and hierarchy surface roughing in a vertical device scheme. In the hierarchy surface roughing, the micron-meter-scaled pattern and sub-micron-meter-scaled roughing are created, as shown in the SEM image in Figure 1, in order to maximize the light extraction near the quantum well region. Through these improvements, we obtained a total of 20% increase on light emission efficiency, as shown in Figure 2.

© 2014 Optical Society of America

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