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Conferences > SLM > 1999 > SMC > SMC3

Theoretical investigation of strained InGaAs/GaPAsSb type-II quantum wells on GaAs for long wavelength (1.3 µm) optoelectronic devices

C. Z. Guo, S. L. Chen, P. Dowd, and Y. H. Zhang

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Abstract

Vertical-cavity surface-emitting lasers (VCSELs) operating at 1.3 µm are desirable for low cost optical communication systems.

© 1999 Optical Society of America

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