Abstract

The THz-radiation power from bulk InAs irradiated with femtosecond optical pulses is significantly enhanced and reaches 650 μW in a 1.7-T magnetic field with 1.5-W excitation power. The THz-radiation power is related almost quadratically both to the magnetic field and excitation laser power. We have also found that the power of the THz-radiation from an InAs sample in a magnetic field is over one order of magnitude higher than that from GaAs. Additionally, a dramatic change of ellipticity is observed, and the spectra of the horizontal and vertical polarization components are found to differ.

© 1998 Optical Society of America

PDF Article
More Like This
Sub-mW, short-pulse THz-radiation from femtosecond-laser irradiated InAs and its polarization and spatial properties

Zhenlin LIU, Hideyuki OHTAKE, Shinji IZUMIDA, Shingo ONO, and Nobuhiko SARUKURA
TS11 Advanced Solid State Lasers (ASSL) 1998

Ellipticity change of high average power THz-radiation from femtosecond optical-pulse irradiated semiconductors under the magnetic field

Nobuhiko SARUKURA, Hideyuki OHTAKE, Shinji IZUMIDA, Zhenlin LIU, and Takaya YAMANAKA
QPD20 Quantum Electronics and Laser Science Conference (QELS) 1997

Intense THz radiation from femtosecond-laser-irradiated InAs and its geometrical dependent saturation effect in high magnetic field

Shingo ONO, Takeyo TSUKAMOTO, Hideyuki OHTAKE, Masahiro SAKAI, Hidetoshi MURAKAMI, and Nobuhiko SARUKURA
UThA7 Ultrafast Electronics and Optoelectronics (UEO) 2001

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription