Abstract

Active mode locking of the far-infrared p-Ge laser is achieved via gain modulation with an rf electric field applied at one end of the crystal parallel to the Voigt- configured magnetic field. A small intrinsic voltage is observed between the rf contacts during lasing which significantly impairs the gain and also the achievable intensity and duration of mode-locked pulses. This voltage is directly compensated by applying a bias to the rf contacts. First results give mode-locked pulse durations of ~ 200 ps.

© 1998 Optical Society of America

PDF Article
More Like This
Faraday-configured mode-locked p-Ge laser and p-Ge far-infrared amplifier

R. E. Peale, A. V. Muravjov, S. H. Withers, R. C. Strijbos, S. G. Pavlov, and V. N. Shastin
96 Advanced Semiconductor Lasers and Their Applications (ASLA) 1999

Far-Infrared p-Ge Laser: Pulse Dynamics and Repetition-Rate Enhancement

R. E. Peale, Kijun Park, H. Weidner, and J. J. Kim
PM4 Advanced Solid State Lasers (ASSL) 1996

Fast dynamics of the p-Ge laser emission

A. V. Muravjov, R. C. Strijbos, C.F. Fredricksen, H. Weidner, W. Trimble, A. Jamison, S. G. Pavlov, and V. N. Shastin
CTuM4 Conference on Lasers and Electro-Optics (CLEO) 1998

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access OSA Member Subscription