High-uniform InAs quantum dots with temperature-insensitive photoiuminescence UnewMth for long-wavelength optical devices

Hideaki Saito; Kenichi Nishi; Shigeo Sugou

doi:10.1364/QO.1999.QMD4

Quantum Optoelectronics
OSA Technical Digest (Optica Publishing Group, 1999),
paper QMD4
•https://doi.org/10.1364/QO.1999.QMD4

High-uniform InAs quantum dots with temperature-insensitive photoiuminescence UnewMth for long-wavelength optical devices

Hideaki Saito, Kenichi Nishi, and Shigeo Sugou

Quantum Optoelectronics 1999

Aspen, Colorado United States
ISBN: 1-55752-600-1

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Quantum Dots II (QMD)

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H. Saito, K. Nishi, and S. Sugou, "High-uniform InAs quantum dots with temperature-insensitive photoiuminescence UnewMth for long-wavelength optical devices," in Quantum Optoelectronics , OSA Technical Digest (Optica Publishing Group, 1999), paper QMD4.

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Abstract

Size uniformity and long wavelength emission of quantum dots are required for fabricating long-wavelength optical devices. This uniformity is indispensable for achieving lasers with superior performance that is result of the delta-function-like density of states.

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