Abstract

The self-assembling growth process during the highly-strained semiconductor epitaxy has allowed high-quality quantum dots applicable to optical devices to be formed. This talk provides the following topics on our research of self-assembled InGaAs quantum dots and quantum-dot lasers: 1) growth of self-assembled quantum dots, 2) laser performance of our originally-designed columnar-shaped quantum-dot lasers, 3) influence of homogeneous broadening of optical gain on lasing spectra, 4) origin of temperature characteristic of threshold currents, and 5) recent progress in the quantum-dot crystal growth. See Ref. 1 for detail.

© 1999 Optical Society of America