A novel method to introduce more than 0.6% biaxial tensile strain and achieve a 60meV direct band gap reduction in epitaxially grown germanium is demonstrated. Possible applications include high efficiency germanium lasers on silicon substrates.
© 2011 Optical Society of America
You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.
Contact your librarian or system administrator
Login to access OSA Member Subscription