GaAs under Intense Photoexcitation: Ultrafast Carrier and Phonon Dynamics

Amlan Basak; Muneaki Hase; Masahiro Kitajima; Hrvoje Petek

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
OSA Technical Digest (CD) (Optica Publishing Group, 2008),
paper QFN4

GaAs under Intense Photoexcitation: Ultrafast Carrier and Phonon Dynamics

Amlan Basak, Muneaki Hase, Masahiro Kitajima, and Hrvoje Petek

Quantum Electronics and Laser Science Conference 2008

San Jose, California United States
4–9 May 2008
ISBN: 978-1-55752-859-9

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Ultrafast Phonon Dynamics (QFN)

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A. Basak, M. Hase, M. Kitajima, and H. Petek, "GaAs under Intense Photoexcitation: Ultrafast Carrier and Phonon Dynamics," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies, OSA Technical Digest (CD) (Optica Publishing Group, 2008), paper QFN4.

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Abstract

Ultrafast eletro-optic sampling is used to observe the response of n-doped GaAs with varying photoexcitation. Photocarrier density dependent coherent LO phonon-plasmon dynamics are observed. Time-resolved analysis reveals complex spectral evolution.

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