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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper QFD2

Middle-IR Random lasing of Cr:ZnS nanocrystalline powder - from diffusion to photon localization regimes

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Abstract

First room temperature mid-IR lasing due to intra-shell transitions in the doped semiconductor nanocrystals (NC) is reported. The 27nm Cr:ZnS NCs oscillate at 2200 nm with 325 mJ/cm2 laser threshold. Temperature dependence of photoluminescence decay, lasing threshold and lasing wavelength maxima of Cr:ZnS NCs are studied.

© 2008 Optical Society of America

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