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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • OSA Technical Digest (CD) (Optica Publishing Group, 2008),
  • paper JTuA18

Improved band anticrossing using many impurity Anderson model and study of N induced scattering in the GaInNAs material system

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Abstract

Using self energy calculations we present an improved band anti crossing model with regards to the perturbed extended and localized states, based on the many impurity Anderson model. We also derive the perturbed density of states.

© 2008 Optical Society of America

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