Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper JTuD43

Synthesis of Si Nano-Pyramids at SiOx/Si Interface for Enhancing Electroluminescence of Si-Rich SiOx Based MOS Diode

Not Accessible

Your library or personal account may give you access

Abstract

A 740nm electro-luminescent ITO/SiOx/p-Si/Al MOS diode with Si nano-pyramids synthesized at SiOx/Si interface is demonstrated with turn-on voltage, threshold current, output power, and lifetime of 50 V, 1.23 mA/cm2, 30 nW, and 10 hrs, respectively.

© 2006 Optical Society of America

PDF Article
More Like This
Enhanced Electroluminescence of Si-rich SiOx Based MOS Diode by Interfacial Precipitated Si Nano-pyramids

Chun-Jung Lin, Chi-Kuan Lin, and Gong-Ru Lin
NThC5 Nanophotonics (NANO) 2006

Plasma Power Detuned Synthesis of Si-QD doped Si-rich SiOx Thin Film for Multicolor Electroluminescent Diodes

Chih-Hsien Cheng, Yu-Chung Lien, and Gong-Ru Lin
ATh2F.5 Asia Communications and Photonics Conference (ACP) 2012

Blue and Yellow Electroluminescence of MOSLED Made on Si-rich SiOx grown by PECVD with detuning Buried Si Nanoclusters Size

Chung-Hsiang Chang and Gong-Ru Lin
JThA96 Conference on Lasers and Electro-Optics (CLEO:S&I) 2008

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved