Abstract
We report a measurement of the modification of the x-ray absorption spectrum near the L and K edges of Silicon after excitation with near IR pulses. The estimated temporal resolution is better than 20 fs.
© 2006 Optical Society of America
PDF ArticleMore Like This
E. Seres and Ch. Spielmann
MB3 International Conference on Ultrafast Phenomena (UP) 2006
E. Seres and Ch. Spielmann
CG2_2 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2007
Matthew R. Ross, Benjamin E Van Kuiken, Matthew L. Strader, Hana Cho, Amy Cordones-Hahn, Tae Kyu Kim, Robert W. Schoenlein, and Munira Khalil
09.Wed.D.3 International Conference on Ultrafast Phenomena (UP) 2014