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  • Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies
  • Technical Digest (CD) (Optica Publishing Group, 2006),
  • paper JFB3

Time-resolved x-ray absorption spectroscopy at the Silicon L- and K-edge with 20 fs resolution

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Abstract

We report a measurement of the modification of the x-ray absorption spectrum near the L and K edges of Silicon after excitation with near IR pulses. The estimated temporal resolution is better than 20 fs.

© 2006 Optical Society of America

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