Lateral Diffusion of Excitons in Double Quantum Well Structures

Z. Vörös; R. Balili; D. Snoke; L. Pfeiffer; K. West

Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies
Technical Digest (CD) (Optica Publishing Group, 2005),
paper QThL3

Lateral Diffusion of Excitons in Double Quantum Well Structures

Z. Vörös, R. Balili, D. Snoke, L. Pfeiffer, and K. West

Quantum Electronics and Laser Science Conference 2005

Baltimore, Maryland United States
22–27 May 2005
ISBN: 1-55752-770-9

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Excitons in Semiconductors (QThL)

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Z. Vörös, R. Balili, D. Snoke, L. Pfeiffer, and K. West, "Lateral Diffusion of Excitons in Double Quantum Well Structures," in Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science and Photonic Applications Systems Technologies, Technical Digest (CD) (Optica Publishing Group, 2005), paper QThL3.

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Abstract

We report on lateral diffusion measurements of excitons in GaAs/AlGaAs double quantum wells of various width. In wide quantum wells the excitons have lifetime up to 10 microseconds and diffusion length up to 500 microns.

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