Signatures of carrier-wave Rabi flopping In GaAs

O.D. Mücke; T. Tritschler; M. Wegener; U. Morgner; F.X. Kärtner

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 2001),
paper QThG3

Signatures of carrier-wave Rabi flopping In GaAs

O.D. Mücke, T. Tritschler, M. Wegener, U. Morgner, and F.X. Kärtner

Quantum Electronics and Laser Science Conference 2001

Baltimore, Maryland United States
6–10 May 2001
ISBN: 1-55752-663-X

From the session
Coherent Semiconductor Nonlinear Optics (QThG)

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O. D. Mücke, T. Tritschler, M. Wegener, U. Morgner, and F. X. Kärtner, "Signatures of carrier-wave Rabi flopping In GaAs," in Quantum Electronics and Laser Science Conference, G. Agrawal, Y. Yamamoto, T. Norris, and J. Thomas, eds., OSA Technical Digest (Optica Publishing Group, 2001), paper QThG3.

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Abstract

Illuminating a semiconductor with a constant light intensity can lead to a periodic oscillation of the inversion, a phenomenon which is known as Rabi flopping.

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