Abstract

Recent studies of semiconductor quantum dots (QDs) using optical micro-probing techniques have revealed many unique and interesting properties of an individual QD, such as sharp homogeneous linewidth^1,2 luminescence intermittency,^3,4 optical nonlinearity,⁵ and nonclassical light emission.⁶ We have investigated the p-photoluminescence (µ-PL) and excitation (µ-PLE) spectra of GaAs/AIGaAs QDs grown on a (411) A GaAs surface.⁷ Under resonant excitation of the dot, we have observed several PL lines corresponding to discrete energy levels of the dot. Surprisingly, we found that the PL lines appear not only on the Stokes side but also on the anti-Stokes side even at low temperature.

© 2001 Optical Society of America