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  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 2000),
  • paper QTuD1

Near-field photoluminescence imaging of single defects in a ZnSe quantum well structure at low temperatures

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Abstract

The sample investigated here was grown by molecular-beam epitaxy on a 300-nm-thick GaAs buffer on a GaAs (001) substrate.

© 2000 Optical Society of America

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