Exciton dephasing in single InGaAs quantum dots

K. Leosson; J. Erland; J.R. Jensen; J.M. Hvam

Quantum Electronics and Laser Science Conference
OSA Technical Digest (Optica Publishing Group, 2000),
paper QTuA17

Exciton dephasing in single InGaAs quantum dots

K. Leosson, J. Erland, J.R. Jensen, and J.M. Hvam

Quantum Electronics and Laser Science Conference 2000

San Francisco, California United States
7–11 May 2000
ISBN: 1-55752-608-7

From the session
Poster Session (QTuA)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
K. Leosson, J. Erland, J. R. Jensen, and J. M. Hvam, "Exciton dephasing in single InGaAs quantum dots," in Quantum Electronics and Laser Science Conference, T. Gallagher, H. Van Driel, H. Gibbs, and D. Wineland, eds., OSA Technical Digest (Optica Publishing Group, 2000), paper QTuA17.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Save article

Abstract

The homogeneous linewidth of excitonic transitions is a parameter of fundamental physical importance.

PDF Article

More Like This

Theory of exciton dephasing in single quantum dots

T. Takaghara and H. Wang
QTuG8 International Quantum Electronics Conference (IQEC) 1998

Importance of Biexcitonic Scattering in Exciton Dephasing in Quantum Dots

H. Gotoh, H. Kamada, T. Saitoh, H. Ando, and J. Temmyo
QWD1 Quantum Electronics and Laser Science Conference (CLEO:FS) 2002

Exciton dephasing in quantum dot molecules

P. Borri, W. Langbein, U. Woggon, M. Schwab, M. Bayer, S. Fafard, Z. Wasilewski, and P. Hawrylak
IWC1 International Quantum Electronics Conference (IQEC) 2004

Previous Article Next Article