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Conferences > QELS > 2000 > QMC > QMC5
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 2000),
  • paper QMC5

(110) interface roughness and local electronic states in GaAs T-shaped quantum wires and wells

M. Yoshita, N. Kondo, H. Sakaki, M. Baba, and H. Akiyama

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Abstract

The difficulty of T-shaped quantum wires (T- QWRs) and lasers1 formed by the cleaved-edge overgrowth (CEO) method,2 the two-step- growth method combined by in-situ cleavage, with molecular beam epitaxy lies in the growth of high-quality layers on (110) cleaved surfaces.

© 2000 Optical Society of America

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