Abstract
From the point of view of device applications as well as basic physics, it is very important to study the nonlinear optical properties of dense excitonic systems in wide-band-gap II–VI compound semiconductors, especially in their quantum well structures. Interband second harmonic generation (SHG) including excitonic effects plays an crucial role in probing of the fundamental optical properties in nearband-gap regions. In this paper, we adopted an experimental setup (Fig. 1) for rotation-angle of sample and polarization angle of incident beam SHG measurements, and reported the reflected SHG at room temperature from Zn1-xCdxSe/ZnSe multiple asymmetric coupled quantum wells grown on GaAs (100) substrates by molecular beam epitaxy with different well parameters. The incident beam of 50 ps pulsewidth, 10 Hz repetition rate, 1 mJ pulse−1 energy at 1.064 μm from a mode-locked Nd:YAG laser was focused onto the samples with a spot of diameter 1 mm and a fixed incident angle 45°.
© 1999 Optical Society of America
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