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Conferences > QELS > 1999 > JThA > JThA6
  • Quantum Electronics and Laser Science Conference
  • OSA Technical Digest (Optica Publishing Group, 1999),
  • paper JThA6

Effect of proton implantation on optically excited terahertz radiation from GaAs

Gong-Ru Lin and Ci-Ling Pan

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Abstract

Optically excited THz. radiation from unbiased semiconductor has been employed as an alternative technique for characterizing the surface properties of damaged semiconductors. Shen et al. have studied the THz radiation of nitrogen-implanted GaAs (GaAs:N+).

© 1999 Optical Society of America

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